• Sougata Bhattacharjee, Samsung Semiconductor India Research (SSIR); Gulshan Kumar Sharma, Samsung Semiconductor India Research (SSIR); Wonil Cho, Samsung Electronics; Akshaya Kumar Jain, Samsung Semiconductor India Research (SSIR); James Kim, Siemens; Andrey Likhopoy, Samsung Electronics; Sangkyu Park, Samsung Electronics; Hyeonuk Noh, Samsung Electronics; Ann Keffer, Siemens; Arun Gogineni, Siemens

  • Andrey Likhopoy, Samsung Electronics; Sangkyu Park, Samsung Electronics; Hyeonuk Noh, Samsung Electronics; Wonil Cho, Samsung Electronics; Inhwan Kim, Siemens EDA; Robert Serphillips, Siemens EDA; Chanjin Kim, Siemens EDA; Justin Lee, Siemens EDA; James Kim, Siemens EDA; Sougata Bhattacharjee, Samsung Semiconductor India Research (SSIR); Gulshan Kumar Sharma, Samsung Semiconductor India Research (SSIR); Akshaya Kumar Jain, Samsung Semiconductor India Research (SSIR)

  • Suresh Vasu, Intel Corporation; palanivel guruvareddiar, Intel Corporation; pooja sundar, Intel Corporation

  • James(JAE YUN) Kim, Siemens EDA; Arun Gogineni, Siemens EDA; Ann keffer, Siemens EDA; Ahn Hyunsun, Samsung LSI